• Four-wave mixing in indium antimonide IEEE Journals

    Four-wave mixing in indium antimonide Abstract: We report a range of experiments in both the degenerate and nondegenerate regimes of four-wave mixing in indium antimonide using CW CO laser sources. For the degenerate case, we specify all the polarization source terms and the signals which they radiate. We identify the dominant term for the phase-conjugate signal experimentally, and confirm

    Four-wave mixing in indium antimonide (Journal Article

    OSTI.GOV Journal Article: Four-wave mixing in indium antimonide. Four-wave mixing in indium antimonide. Full Record; Other Related Research

    Four-wave mixing in indium antimonide Semantic Scholar

    We report a range of experiments in both the degenerate and nondegenerate regimes of four-wave mixing in indium antimonide using CW CO laser sources. For the degenerate case, we specify all the polarization source terms and the signals which they radiate. We identify the dominant term for the phase-conjugate signal experimentally, and confirm that this involves a large-period grating formed by

    Growth and characterization of indium antimonide and

    Growth and characterization of indium antimonide and gallium ant imonide crystals N facilitating proper mixing of the molten elements to form the compound. Synthesis of InSb involves the preparation of homo-genized sample of InSb from elemental In and Sb. Theproper conical tip at the bottom to facilitate nucleation for ratio of In atoms to Sb atoms in the homogenized sample should be 1 : 1

    Indium Antimonide (InSb) SpringerLink

    Indium antimonide (InSb) has the smallest band gap of any of the III–V semiconductors ( E o ∼0.18 eV at 300 K, Ref. [1]). InSb is, thus, an interesting semiconductor for use in long-wavelength optoelectronic device applications. Its relatively high electron mobility (μ n

    Indium Antimonide (InSb) Single Crystal InSb Substrate

    Indium Antimonide (InSb) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness. PACKAGING Polished Wafers. Wafers are packaged in coin-style wafer carriers that are individually sealed in two outer bags under inert atmosphere. As-cut Wafers . Packaged in coin-style wafer carriers, Gel-Pak or

    Four-wave mixing in indium antimonide IEEE Journals

    Four-wave mixing in indium antimonide Abstract: We report a range of experiments in both the degenerate and nondegenerate regimes of four-wave mixing in indium antimonide using CW CO laser sources. For the degenerate case, we specify all the polarization source terms and the signals which they radiate. We identify the dominant term for the phase-conjugate signal experimentally, and confirm

    Four-wave mixing in indium antimonide (Journal Article

    OSTI.GOV Journal Article: Four-wave mixing in indium antimonide. Four-wave mixing in indium antimonide. Full Record; Other Related Research

    Four-wave mixing in the far infrared from free carriers in

    01/10/1991· Four-wave mixing in the far infrared from free carriers in n-type indium antimonide. Hart RM, Rodríguez GA, Sievers AJ. Far-infrared techniques have been developed that make possible the first observation to our knowledge of resonant four-wave mixing of submillimeter-wave radiation in n-type InSb maintained at 2 K. The dependences of the emission strength on dc magnetic field, circular

    (PDF) Four-wave mixing in the far infrared from free

    Four-wave mixing in the far infrared from free carriers in n-type indium antimonide. Optics Letters, 1991. Albert Sievers. Download PDF. Download Full PDF Package. This paper. A short summary of this paper. 37 Full PDFs related to this paper . READ PAPER. Four-wave mixing in the far infrared from free carriers in n-type indium antimonide. Download. Four-wave mixing in the far infrared from

    Millimeter mixing and detection in bulk InSb IEEE

    Millimeter mixing in the 8-mm region (30 to 40 Gc/s) was demonstrated using bulk n-type indium antimonide as the nonlinear element. Conversion losses as low as 18 dB were measured at 4.2°K, using a 1.5 Mc/s IF, from which a conversion loss as low as 12 dB was calculated by correcting for dissipative loss and other effects. For low conversion losses, an upper limit is placed on the IF

    The In-Sb (Indium-Antimony) system SpringerLink

    A.V. Nikol’skaya, V.A. Geidrikh, and Y.I. Gerasimov, “Thermodynamic Properties of Indium Antimonide, “Determination of the Enthalpy of Mixing in the Ga-In-Sb and Bi-Sn-Sb Systems by Differential Thermal Analysis, ”Russ. J. Phys. Chem., 48, 584 (1974). (Thermo; Experimental) Google Scholar 75Ita: K. Itasaki and A. Yazawa, “Measurements of Thermodynamic Quantities for Sn-Zn and In

    Superconducting indium antimonide ScienceDirect

    In the present work n-type indium antimonide was treated at seven different conditions of pressure and temperature in the ranges of 30 170 kbar and 77 5230K using a modified Drickamer resistance cell [4]. The samples were cooled to 77oK before the pressure was released. The resulting samples were discs 0.3 mm thick and 1.5 mm in diameter. The superconductivity was tested for three discs in

    Preparation of high mobility thin films of indium

    An investigation of the growth of thin films of indium antimonide for use in active devices has been made. Films have been grown by a variety of methods which range from atomic mixing to relatively coarse layering of the components on the substrate. These methods include the three temperature method and flash evaporation. Vacuum pressure has been varied from 10 −6 to 10 −9 torr. Substrates

    Chapter 1.10 Miscellaneous Etchants

    Indium Antimonide HNO. 3 : HF : Acetic Acid (5:3:3) Good pit-free striations of (211) surfaces . Indium Phosphide Cut on diamond saw using slow feed. Lap using 5u powder. Degrease in acetone, then methanol. Chemical etch using 5% bromine by weight for about 2 minutes using a swirling motion. Rinse in methanol, DI water, N : 2: dry. Indium Tin Oxide (ITO) In order to etch ITO it is needed

    Fast Spin-Orbit Qubit in an Indium Antimonide Nanowire

    indium antimonide nanowire ( 1:5 m long, 100 nm thick) contacted by Ti=Al source and drain electrodes. Below the nanowire, separated by a layer of Si 3N 4 dielec-tric, is a set of five narrow gates (60 nm pitch) used to induce a double quantum dot potential in the nanowire and control the number of electrons in these dots. Underneath another layer of Si 3N 4 is a large metallic gate (BG) by

    Preparation of high mobility thin films of indium

    An investigation of the growth of thin films of indium antimonide for use in active devices has been made. Films have been grown by a variety of methods which range from atomic mixing to relatively coarse layering of the components on the substrate. These methods include the three temperature method and flash evaporation. Vacuum pressure has been varied from 10 −6 to 10 −9 torr. Substrates

    British Library EThOS: Four-wave mixing and optical

    Four-wave mixing and optical bistability in indium antimonide Author: Attar, Hameed Abdul-Wahid Ahmid Al ISNI: 0000 0001 3405 0338 Awarding Body: Heriot-Watt University Current Institution: Heriot-Watt University Date of Award: 1986 Availability of Full Text:

    Superconducting indium antimonide ScienceDirect

    In the present work n-type indium antimonide was treated at seven different conditions of pressure and temperature in the ranges of 30 170 kbar and 77 5230K using a modified Drickamer resistance cell [4]. The samples were cooled to 77oK before the pressure was released. The resulting samples were discs 0.3 mm thick and 1.5 mm in diameter. The superconductivity was tested for three discs in

    The In-Sb (Indium-Antimony) system SpringerLink

    A.V. Nikol’skaya, V.A. Geidrikh, and Y.I. Gerasimov, “Thermodynamic Properties of Indium Antimonide, “Determination of the Enthalpy of Mixing in the Ga-In-Sb and Bi-Sn-Sb Systems by Differential Thermal Analysis, ”Russ. J. Phys. Chem., 48, 584 (1974). (Thermo; Experimental) Google Scholar 75Ita: K. Itasaki and A. Yazawa, “Measurements of Thermodynamic Quantities for Sn-Zn and In

    Two-photon absorption in indium antimonide and Radiative

    Two-photon absorption in indium antimonide and germanium 326 1 wavelength in the HF laser region, since the direct energy gap at room temperature corresponds to a wavelength of about 3 pm. 2. Transmission in the presence of two-photon absorption The intensity, I, a distance z into a semiconductor sample may be written dI/dz = K,I + K21Z +

    Indium Antimonide prochemonline

    (Indium Antimonide) (Indium Antimonide) CLASS 6.1 CLASS 6.1 PG III PG III Marine Pollutant: No SECTION 15 REGULATORY INFORMATION SARA 302/304: Not Listed SARA 311/312: Acute Health Hazard, Chronic Health Hazard SARA (TITLE 313): Indium Antimonide !!!

    Chapter 1.10 Miscellaneous Etchants

    Indium Antimonide HNO. 3 : HF : Acetic Acid (5:3:3) Good pit-free striations of (211) surfaces . Indium Phosphide Cut on diamond saw using slow feed. Lap using 5u powder. Degrease in acetone, then methanol. Chemical etch using 5% bromine by weight for about 2 minutes using a swirling motion. Rinse in methanol, DI water, N : 2: dry. Indium Tin Oxide (ITO) In order to etch ITO it is needed

    Fast Spin-Orbit Qubit in an Indium Antimonide Nanowire

    indium antimonide nanowire ( 1:5 m long, 100 nm thick) contacted by Ti=Al source and drain electrodes. Below the nanowire, separated by a layer of Si 3N 4 dielec-tric, is a set of five narrow gates (60 nm pitch) used to induce a double quantum dot potential in the nanowire and control the number of electrons in these dots. Underneath another layer of Si 3N 4 is a large metallic gate (BG) by

    Study of annealing effects in In–Sb bilayer thin films

    Indium antimonide (InSb) is one of the most widely studied III–V group compound semiconductors. It is an important material in the field of infrared detectors in the 3–5 μm wavelength range due to its high electron hole mobility and low energy gap at room temperature (Chen et al 1992). It is also used for the fabrication of high speed Hall and optoelectronic devices (Milnes 1973; Asauskas

    Infrared detectors: Advances, challenges and new technologies

    05/04/2020· telluride (MCT), indium antimonide (InSb) and GaAs based quantum-well infrared photodetectors (QWIPs), depending on the application and wavelength range. However, they operate at low temperatures requiring costly and bulky cryogenic systems. In addition there is always a need for better performance, which generates possibilities for developing new technologies. Some emerging

    Low frequency pressure modulation of indium antimonide

    15/07/2012· The U.S. Department of Energy's Office of Scientific and Technical Information

    The In-Sb (Indium-Antimony) system SpringerLink

    A.V. Nikol’skaya, V.A. Geidrikh, and Y.I. Gerasimov, “Thermodynamic Properties of Indium Antimonide, “Determination of the Enthalpy of Mixing in the Ga-In-Sb and Bi-Sn-Sb Systems by Differential Thermal Analysis, ”Russ. J. Phys. Chem., 48, 584 (1974). (Thermo; Experimental) Google Scholar 75Ita: K. Itasaki and A. Yazawa, “Measurements of Thermodynamic Quantities for Sn-Zn and In

    Indium Antimonide prochemonline

    (Indium Antimonide) (Indium Antimonide) CLASS 6.1 CLASS 6.1 PG III PG III Marine Pollutant: No SECTION 15 REGULATORY INFORMATION SARA 302/304: Not Listed SARA 311/312: Acute Health Hazard, Chronic Health Hazard SARA (TITLE 313): Indium Antimonide !!!

    Grain Growth Studies of Indium Antimonide Thin Films

    The particle size found to about 1100 micrometer of thin film. In this paper we present some of our results concerning the synthesis and crystal growth of indium antimonide compounds . To carry out the synthesis of InSb a suitable mixing furnace was designed and fabricated.

    The plasticity of indium antimonide: Insights from

    01/03/2016· This is the case of the III–V compound semiconductor indium antimonide (InSb). Since the 60s, there has been extensive experimental and theoretical studies to uncover the origin of this transition . All studies converge to an explanation of the brittle-to-ductile transition in terms of change of dislocation nature between the “high stress-low temperature” brittle regime and the “low

    Phys. Rev. B 1, 3426 (1970) Free-Carrier Optical

    Two types of free-carrier nonlinearity are considered, one arising from carrier scattering processes and the other due to nonparabolicity of conduction band. Numerical results, comparing the two nonlinearities for the special case of mixing of two C O 2 laser beams in indium antimonide, have been presented at the end. Received 22 May 1969

    SU1669337A1 Method for indium antimonide polishing

    The invention relates to semiconductor technology and can be used when precision tracing of anthomnndium indium structures for optoelectronic devices is necessary when liquid herbs are used. The aim of the invention is to increase the reproducibility of the thickness of the etched layer by reducing the etching rate. Chemical polishing of the surface of the plates and indium antimonide

    Chapter 1.10 Miscellaneous Etchants

    Indium Antimonide HNO. 3 : HF : Acetic Acid (5:3:3) Good pit-free striations of (211) surfaces . Indium Phosphide Cut on diamond saw using slow feed. Lap using 5u powder. Degrease in acetone, then methanol. Chemical etch using 5% bromine by weight for about 2 minutes using a swirling motion. Rinse in methanol, DI water, N : 2: dry. Indium Tin Oxide (ITO) In order to etch ITO it is needed

    III-V Semiconductor Materials & Compounds RF

    17/04/2020· Indium Antimonide is an interesting compound, given that it has a very narrow bandgap of 0.17 eV and the highest electron mobility of any known semiconductor. InSb can be used in quantum wells and bipolar transistors operating up to 85 GHz and field-effect transistors operating at higher frequencies. It can also be used as a terrahertz radiation source.

    Infrared detectors: Advances, challenges and new technologies

    05/04/2020· telluride (MCT), indium antimonide (InSb) and GaAs based quantum-well infrared photodetectors (QWIPs), depending on the application and wavelength range. However, they operate at low temperatures requiring costly and bulky cryogenic systems. In addition there is always a need for better performance, which generates possibilities for developing new technologies. Some emerging

 

Copyright © L&M Company name All rights reserved. Sitmap